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| Silicon Bridge Rectifiers KBU600-G thru 610-G (RoHS Device) Reverse Voltage: 50 ~ 1000 Volts Forward Current: 6.0 Amp Features: Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability Ideal for Printed Circuit Boards J G H M K L __ _ + A B C D KBU Max Dim Min 22.7 23.70 A 4.10 B 3.80 4.20 4.70 C 1.70 2.20 D E 10.30 11.30 4.50 6.80 G 5.60 H 4.60 J 25.40 19.30 K L 16.80 17.80 6.60 7.10 M 5.20 N 4.70 1.20 1.30 P All Dimensions in mm E Mechanical Data: Case: Molded Plastic Terminals: Plated Leads Solderable per MIL STD-202, Method 208 Weight: 1.7 grams (approx.) Mounting Position: Any Marking: Type Number N P CHARACTERISTICS Symbol 600-G 601-G 602-G 604-G 606-G 608-G 610-G VRRM VRWM VR VR(RMS) IO IFSM VFM IR I2t RJC Tj TSTG 35 70 140 280 6.0 420 560 700 50 100 200 400 600 800 1000 KBU KBU KBU KBU KBU KBU KBU UNIT Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @ TA = 100C Non-Repetitive Peak Forward Surge Current 8.3ms Single half Sine-Wave Superimposed on rated load (JEDEC Method) Forward Voltage (per element) @ IF=3.0A Peak Reverse Current At Rated DC Blocking Voltage @TC=25C @TC=100C V V A 250 1.0 10 1.0 166 4.2 -65 to +150 A V uA mA A2S K/W C Rating for Fusing (t<8.3ms) (Note1) Typical Thermal Resistance (Note2) Operating and Storage Temperature Range Note: 1. Non-repetitive for t>1ms and <8.3ms. 2. Thermal resistance junction to ambient mounted on PC board with 13.0x13.0x0.03mm thick land areas. "-G" suffix designated RoHS compliant version Comchip Technology Corporation . Tel:510-657-8671 . Fax: 510-657-8921 . www.comchiptech.com Page1 Silicon Bridge Rectifiers KBU600-G thru 610-G (RoHS Device) 6 I(AV), Average Output Current (A) 5 4 3 2 1 Single Phase Half Wave 60Hz Resistive or Inductive Load 100 IF, Instantaneous FWD Current (A) 10 1.0 Tj = 25C Pulse Width = 300ms 0 20 40 60 80 100 120 140 0.1 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 Tc, CASE TEMPERATURE (C) Fig. 1 Forawrd Current Derating Curve VF, Instanteous FWD Voltage (V) Fig.2 Typical Forward Characteristics, per element 250 IFSM, Peak FWD Surge Current (A) CJ, Capacitance (pF) 400 200 150 100 100 50 8.3ms Single Half Sine-Wave Jedec Method Tj=25C 0 1 10 Number of Cycles at 60Hz Fig.3 MAx Non-Repetitive FWD Surge Current 100 0 1 10 VR, Reverse Voltage (V) Fig 4. Typical Junction Capacitance Per Element 100 "-G" suffix designated RoHS compliant version Comchip Technology Corporation . Tel:510-657-8671 . Fax: 510-657-8921 . www.comchiptech.com Page2 |
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